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| Preliminary SIM200D06AV1 VCES = 600V Ic= 200A VCE(ON) typ. = 1.8V @Ic= 200A "HALF-BRIDGE" IGBT Feature design technology Low VCE (sat) Low Turn-off losses Short tail current for over 20KHz Applications Motor controls VVVF inverters Inverter-type welding MC over 18KHZ SMPS, Electrolysis UPS/EPS, Robotics Package : V1 Absolute Maximum Ratings @ Tj=25 Symbol VCES VGE IC ICP IF IFM tp Viso Weight Tj Tstg Md (Per Leg) Condition TC = Parameter Collector-to-Emitter Voltage Gate emitter voltage Continuous Collector Current Pulsed collector current Diode Continuous Forward Current Diode Maximum Forward Current Short circuit test, VGE = 15V, VCC = 360V Isolation Voltage test Weight of Module Junction Temperature Storage Temperature Mounting torque with screw : M5 TC = 80 TC = TC = 80 TC = TC = 150 Ratings 600 20 200 (290) 400 200 (290) 400 Unit V V A A A A 25 6 (8) 2500 190 -40 ~ 150 -40 ~ 125 2.0 N.m V g AC @ 1 minute Static Characteristics @ Tj = 25 Parameters VCE(ON) VGE(th) ICES IGES VF RGINT Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Forward voltage drop Integrated gate resistor (unless otherwise specified) Min Typ 1.80 5.8 Max 1.95 Unit V Test conditions IC = 200A, VGE = 15V VCE = VGE, IC = 4 VGE= 0V, VCE = 600V VCE = 0V, VGE = IF = 200A V 6.5 5.0 400 1.6 2 1.9 Preliminary Electrical Characteristic Values (IGBT / DIODE) @ Tj = 25 Parameters Ciss Coss Crss td(on) tr td(off) tf VBR IRM trr Qrr Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Cathode-Anode breakdown Voltage Maximum Reverse Leakage Current Reverse Recovery Time Reverse Recovery Charge 130 9 600 250 SIM200D06AV1 (unless otherwise specified) Unit Test conditions VCE = 25V, VGE = V f = 1 MHz Min Typ 9200 580 270 145 30 Max pF Inductive Switching (125 VCC = 300V ns IC = 200A, VGE = RG = 2 V VR = 600V ns C IF = 200A, VR = 300V di / dt = 2200A / 15V 340 60 Thermal Characteristics Symbol RJC RJC RCS Parameter Junction-to-Case (IGBT Part, Per 1/2 Module) Junction-to-Case (Diode Part, Per 1/2 Module) Case-to-Heat Sink (Conductive grease applied) Min - Typ 0.05 Max 0.24 0.4 - Unit /W specifications Preliminary Fig.1, Output characteristic (typical) SIM200D06AV1 Fig. 2, Output characteristic &VGE (typical) VGE = 15V Tvj = 150 Fig 3, Transfer characteristic (typical) Fig.4, Reverse bias safe operating area (RBSOA) = VCE = 20V VGE 15V, RGoff = 2.4 , Tvj = 150 Fig.5, Forward characteristic of diode (typical) IF = f(VF) Preliminary Package Outline (dimensions in mm) SIM200D06AV1 JUNE 2008 Headquarter: #602, B/D, 402 BLD, BLK4, Techno-park, Wonmi-Gu, Bucheon-City, S.KOREA Tel)+82-32-234-4781, Fax)+82-32-234-4789 Sales & Marketing clzhang@semwiell.com sales@semiwell.com |
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